PART |
Description |
Maker |
EDJ1104BBSE-DG-F EDJ1104BBSE-DJ-F EDJ1108BBSE-DJ-F |
1G bits DDR3 SDRAM 256M X 4 DDR DRAM, 0.4 ns, PBGA78 256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
Elpida Memory ELPIDA MEMORY INC
|
MT46H256M32LGCM-5A MT46H256M32L4CM-6A MT46H256M32L |
256M X 32 DDR DRAM, 5 ns, PBGA90 128M X 32 DDR DRAM, 5 ns, PBGA168
|
|
W1D128M72R8B-5AP-PB1 W1D128M72R8B-5AL-PB1 W1D128M7 |
128M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 MO-237, DIMM-240 256M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.5 ns, DMA240 32M X 8 DDR DRAM MODULE, 0.6 ns, DMA240 64M X 8 DDR DRAM MODULE, 0.5 ns, DMA240
|
Xilinx, Inc. XILINX INC
|
K4H1G0438M-UC/LA2 K4H1G0838M-UC/LA2 K4H1G0838M-UC/ |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 256M X 4 DDR DRAM, 0.7 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 0603 18 OHM 1/16W RESISTOR, 1K, 1%, SMT 0603 1Gb M-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HMT351R7CFR4C-H9 HMT325R7CFR8C-H9 |
512M X 72 DDR DRAM, DMA240 256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
NT5CB256M4CN-AC NT5CB256M4CN-BE |
256M X 4 DDR DRAM, PBGA78
|
NANYA TECHNOLOGY CORP
|
M391T5663FB3-CE7 |
256M X 72 DDR DRAM MODULE, 0.4 ns, DMA240
|
|
EBJ21EE8BAFA-AG-E |
256M X 72 DDR DRAM MODULE, DMA240
|
ELPIDA MEMORY INC
|
HMT351R7BFR8A-H9 |
256M X 72 DDR DRAM MODULE, DMA240
|
HYNIX SEMICONDUCTOR INC
|
M393B5673GB0-CF8 |
256M X 72 DDR DRAM MODULE, 20 ns, DMA240
|
|
HY5DU56422AT HY5DU56422ALT HY5DU561622AT |
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 64Mx4 |.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M 16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的|焦九龙/升| DDR SDRAM内存- 256M
|
Hynix Semiconductor, Inc.
|
|